 Advanced Mitsubishi R-Series Chip Technology  Low VCE(sat)  Creepage and Clearance meet IEC 60077-1  High Isolation Voltage  Rugged SWSOA and RRSOA  Com.

Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnec.

Powerex IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and .

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