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QID1230015 - IGBT Module

General Description

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode.

Key Features

  • £ AlSiC Baseplate £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID1230015 Dual IGBTMOD™ NX-Series Module 300 Amperes/1200 Volts A D E JF G H Q ST U R ST QU W VX 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 47 24 48 23 DETAIL "B" 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 M LK N DETAIL "A" KP L AK JY (4 PLACES) AD AE AF AA B Z AB AG AC (4 PLACES) AJ AH AL AMC AT AU AV E1C2(24) E1C2(23) AW AX Tr2 G2(38) E2(39) Di2 Di1 Tr1 C1(22) E1(16) G1(15) DETAIL "B" E2 C1 (47) (48) Th NTC TH1 TH2 (1) (2) AP AR AS AN AQ DETAIL "A" *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N P Q R S T U V W X Y Inches 5.