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Power Innovations Limited

TIP3055 Datasheet Preview

TIP3055 Datasheet

NPN SILICON POWER TRANSISTOR

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Copyright © 1997, Power Innovations Limited, UK
TIP3055
NPN SILICON POWER TRANSISTOR
DECEMBER 1970 - REVISED MARCH 1997
q Designed for Complementary Use with the
TIP2955 Series
q 90 W at 25°C Case Temperature
q 15 A Continuous Collector Current
q Customer-Specified Selections Available
B
C
SOT-93 PACKAGE
(TOP VIEW)
1
2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0) (see Note 1)
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
VCBO
VCER
VEBO
IC
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TL
100
70
7
15
7
90
3.5
62.5
-65 to +150
-65 to +150
260
V
V
V
A
A
W
W
mJ
°C
°C
°C
NOTES: 1. This value applies when the base-emitter resistance RBE = 100 .
2. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = 10 V.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1




Power Innovations Limited

TIP3055 Datasheet Preview

TIP3055 Datasheet

NPN SILICON POWER TRANSISTOR

No Preview Available !

TIP3055
NPN SILICON POWER TRANSISTOR
DECEMBER 1970 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
V(BR)CEO
ICER
ICEO
ICEV
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe|
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Voltage between
base and emitter
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
IC = 30 mA
VCE = 70 V
VCE = 30 V
VCE = 100 V
VEB = 7 V
VCE = 4 V
VCE = 4 V
IB = 0.4 A
IB = 3.3 A
VCE = 4 V
VCE = 10 V
VCE = 10 V
IB = 0
RBE = 100
IB = 0
VBE = -1.5 V
IC = 0
IC = 4 A
IC = 10 A
IC = 4 A
IC = 10 A
IC = 4 A
IC = 0.5 A
IC = 0.5 A
(see Note 5)
60
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
f = 1 MHz
20
5
15
3
1
0.7
5
5
70
1.1
3
1.8
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
mA
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.39 °C/W
35.7 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton Turn-on time
toff Turn-off time
IC = 6 A
VBE(off) = -4 V
IB(on) = 0.6 A
RL = 5
IB(off) = -0.6 A
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.6 µs
1 µs
PRODUCT INFORMATION
2


Part Number TIP3055
Description NPN SILICON POWER TRANSISTOR
Maker Power Innovations Limited
Total Page 6 Pages
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