Copyright © 1997, Power Innovations Limited, UK
NPN SILICON POWER TRANSISTOR
DECEMBER 1970 - REVISED MARCH 1997
q Designed for Complementary Use with the
q 90 W at 25°C Case Temperature
q 15 A Continuous Collector Current
q Customer-Specified Selections Available
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0) (see Note 1)
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
-65 to +150
-65 to +150
NOTES: 1. This value applies when the base-emitter resistance RBE = 100 Ω.
2. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 10 V.
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.