*Latest Trench Power MOSFET technology
*Low On-state Resistance
*High Current Density
*Low Gate Charge
*100% UIS Test Product Summery BVDS 60V RDSO.

with low gate drive requirements . Features
*Latest Trench Power MOSFET technology
*Low On-state Resistance
.

The HXN0680 is n-channel power trench MOSFET with latest technology. So fast switching speed and low onresistance. Usually used at power switching application . It is also intended for any applications with low gate drive requirements . Features
.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts