HXN0680 - Silicon N-Channel Power MOSFET

Download the HXN0680 datasheet PDF. This datasheet also covers the HXN0680-Power variant, as both devices belong to the same silicon n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The HXN0680 is n-channel power trench MOSFET with latest technology.

So fast switching speed and low onresistance.

Usually used at power switching application .

Key Features

Latest Trench Power MOSFET technology.
Low On-state Resistance.
High Current Density.
Low Gate Charge.
100% UIS Test Product Summery BVDS 60V RDSON 6.5mΩ ID 80A.

📥 Download Datasheet

HXN0680 silicon n-channel power mosfet by Power-IC - Datasheet Preview — Note: The manufacturer provides a single datasheet file (HXN0680-Power-IC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	HXN0680
Manufacturer	Power-IC
File Size	294.88 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HXN0680 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Description The HXN0680 is n-channel power trench MOSFET with latest technology. So fast switching speed and low onresistance. Usually used at power switching application . It is also intended for any applications with low gate drive requirements . Features ·Latest Trench Power MOSFET technology ·Low On-state Resistance ·High Current Density ·Low Gate Charge ·100% UIS Test Product Summery BVDS 60V RDSON 6.