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PMF10N60M - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using advanced super junction technology.

Features

  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available ID 10A TO220F Pin Configuration GDS.

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Datasheet preview – PMF10N60M

Datasheet Details

Part number PMF10N60M
Manufacturer Potens semiconductor
File Size 568.87 KB
Description N-Channel MOSFETs
Datasheet download datasheet PMF10N60M Datasheet
Additional preview pages of the PMF10N60M datasheet.

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Full PDF Text Transcription

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600V N-Channel MOSFETs PMF10N60M General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply BVDSS 600V RDSON 0.
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