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Potens semiconductor

PMF08N80T Datasheet Preview

PMF08N80T Datasheet

N-Channel MOSFETs

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800V N-Channel MOSFETs
PMF08N80T
General Description
These N-Channel enhancement mode power field effect
transistors are using advanced super junction
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand
high energy pulse in the avalanche and commutation
mode. These devices are well suited for high efficiency
switch mode power supply
BVDSS
800V
RDSON
1.4
Features
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
ID
8A
TO220F Pin Configuration
GDS
Applications
High efficient switched mode power supplies
TV Power
Adapter/charger
Server Power
PV Inverter / UPS
Absolute Maximum Ratings Tc=25unless otherwise noted
Symbol
VDS
VGS
ID
IDM
EAS
IAS
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Continuous (TC=25)
Drain Current Continuous (TC=100)
Drain Current Pulsed1
Single Pulse Avalanche Energy2
Single Pulse Avalanche Current2
Power Dissipation (TC=25)
Power Dissipation Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
Thermal Characteristics
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
Rating
800
±30
8
5.1
32
132
9.4
59
0.47
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
W/
Typ.
---
---
Max.
62
2.12
Unit
/W
/W
Potens semiconductor corp.
1
Ver.1.00




Potens semiconductor

PMF08N80T Datasheet Preview

PMF08N80T Datasheet

N-Channel MOSFETs

No Preview Available !

800V N-Channel MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
PMF08N80T
Off Characteristics
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VDS=800V , VGS=0V , TJ=25
VDS=640V , VGS=0V , TJ=125
VGS=±30V , VDS=0V
Min.
800
---
---
---
---
Typ.
---
0.86
---
---
---
Max.
---
---
1
10
±100
Unit
V
V/
uA
uA
nA
On Characteristics
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
gfs Forward Transconductance
VGS=10V , ID=4A
VGS=VDS , ID =250uA
VDS=10V , IS=3A
--- 1.1 1.4
2 3.7 4
V
--- -9.4 --- mV/
--- 4 --- S
Dynamic and switching Characteristics
Qg Total Gate Charge3,4
Qgs Gate-Source Charge3,4
VDS=50V , VGS=10V , ID=4A
Qgd Gate-Drain Charge3,4
Td(on)
Tr
Turn-On Delay Time3,4
Rise Time3,4
VDD=30V , VGS=10V , RG=2.5
Td(off)
Turn-Off Delay Time3,4
ID=0.5A
Tf Fall Time3,4
Ciss Input Capacitance
Coss Output Capacitance
VDS=25V , VGS=0V , F=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, F=1MHz
--- 29.3 ---
--- 5.2 ---
--- 13.2 ---
--- 78 ---
--- 100 ---
--- 313 ---
--- 102 ---
--- 1610 ---
--- 133 ---
--- 78 ---
--- 3.6 ---
nC
ns
pF
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time3
Reverse Recovery Charge3
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
VGS=0V,IS=8A , dI/dt=100A/µs
TJ=25
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=80V,VGS=10V,L=3mH,IAS=9.4A.,RG=25,Starting TJ=25.
3. The data tested by pulsed , pulse width 300us , duty cycle 2%.
4. Essentially independent of operating temperature.
Min.
---
---
---
---
---
Typ.
---
---
---
525
6.08
Max.
8
16
1
---
---
Unit
A
A
V
ns
nC
Potens semiconductor corp.
2
Ver.1.00


Part Number PMF08N80T
Description N-Channel MOSFETs
Maker Potens semiconductor
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