PMEN2N7002S mosfets equivalent, n-channel mosfets.
* 60V,0.3A, RDS(ON) =1.6Ω@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
* G-S ESD Protection.
SOT23-3S Pin Configuration
D
D
S G
G S
BVDSS 60V
RDSON 1.6Ω
ID 0.3A
Features
* 60V,0.3A, RDS(ON) =1.6Ω@VGS=.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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