PMEN2N7002S Overview
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 60V,0.3A, RDS(ON) =1.6Ω@VGS=10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
- G-S ESD Protection Diode Embedded
