PMEN2423S
PMEN2423S is P-Channel MOSFET manufactured by Potens semiconductor.
Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration
BVDSS RDSON
-20V
43mΩ
-4A
- -20V,-4A, RDS(ON) =43mΩ@VGS = -4.5V
- Low gate charge (typical Q gd 4.5n C)
- G-S ESD Protection Diode Embedded
- Fast switching
- Green Device Available
- Suit for -1.8V Gate Drive Applications
Applications
- Notebook
- Load Switch
- LED applications
Absolute Maximum Ratings (Tc=25℃ unless otherwise noted)
Symbol VDS VGS ID
IDM PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous (TC=25℃) Drain Current
- Continuous (TC=100℃) Drain Current
- Pulsed Power Dissipation (TC=25℃) Power Dissipation
- Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range
(Note 1)
Rating -20 ±8 -4 -2.4 -16 0.9
0.0072 -55 to 150 -55 to 150
Units V V A A A W
W/℃ ℃ ℃
Thermal Characteristics
Symbol RθJA
Parameter Thermal Resistance Junction to ambient
Typ. ---
Max. 140
Unit ℃/W
Potens semiconductor...
