900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Potens semiconductor

PMEN2423S Datasheet Preview

PMEN2423S Datasheet

P-Channel MOSFETs

No Preview Available !

20V P-Channel MOSFETs
PMEN2423S
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration
D
D
S
G
G
S
BVDSS
-20V
RDSON
43m
ID
-4A
-20V,-4A, RDS(ON) =43mΩ@VGS = -4.5V
Low gate charge (typicalQ gd 4.5nC)
G-S ESD Protection Diode Embedded
Fast switching
Green Device Available
Suit for -1.8V Gate Drive Applications
Applications
Notebook
Load Switch
LED applications
Absolute Maximum Ratings (Tc=25unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (TC=25)
Drain Current – Continuous (TC=100)
Drain Current – Pulsed
Power Dissipation (TC=25)
Power Dissipation – Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
(Note 1)
Rating
-20
±8
-4
-2.4
-16
0.9
0.0072
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance Junction to ambient
Typ.
---
Max.
140
Unit
/W
Potens semiconductor corp.
1
Ver.1.00




Potens semiconductor

PMEN2423S Datasheet Preview

PMEN2423S Datasheet

P-Channel MOSFETs

No Preview Available !

20V P-Channel MOSFETs
PMEN2423S
Electrical Characteristics (TJ=25 , unless otherwise noted)
Off Characteristics
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Conditions
VGS=0V , ID=-250uA
Reference to 25, ID=-1mA
VDS=-20V , VGS=0V , TJ=25
VDS=-20V , VGS=0V , TJ=125
VGS=±8V , VDS=0V
Min.
-20
---
---
---
Typ.
---
-0.02
---
---
Max.
---
---
-1
-100
±10
Unit
V
V/
uA
uA
uA
On Characteristics
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
VGS=-4.5V , ID=-4A
VGS=-2.5V , ID=-3A
VGS=-1.8V , ID=-2A
VGS=VDS , ID =-250uA
--- 37 43 m
--- 45 54 m
56 73 m
-0.3 -0.55 -1
V
--- 3 --- mV/
Dynamic and switching Characteristics
Qg Total Gate Charge (10V)
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
--- 17 ---
VDS=-10V , VGS=-4.5V , ID=-4A
--- 1.3 ---
(Note 2,3)
--- 4.5 ---
Td(on)
Tr
Td(off)
Tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
--- 9.5 ---
VDD=-10V , VGS=-4.5V , RG=3,
--- 17 ---
ID=-1A
--- 90 ---
(Note 2,3)
--- 30 ---
Ciss Input Capacitance
--- 1450 ---
Coss Output Capacitance
VDS=-10V , VGS=0V , F=1MHz
--- 200 ---
Crss Reverse Transfer Capacitance
--- 160 ---
nC
ns
pF
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width 300us , duty cycle 2%.
3. Essentially independent of operating temperature.
Min.
---
---
---
Typ.
---
---
-0.75
Max.
-4
-16
-1.2
Unit
A
A
V
Potens semiconductor corp.
2
Ver.1.00


Part Number PMEN2423S
Description P-Channel MOSFETs
Maker Potens semiconductor
PDF Download

PMEN2423S Datasheet PDF






Similar Datasheet

1 PMEN2423S P-Channel MOSFETs
Potens semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy