SOT23-3S Pin Configuration D D S G G S BVDSS -20V RDSON 43mΩ ID -4A
* -20V,-4A, RDS(ON) =43mΩ@VGS = -4.5V <.

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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