* 100V,0.2A, RDS(ON) =6Ω@VGS=10V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* G-S ESD Protection Diode Embedded Applicatio.

SOT23-3S Pin Configuration D D S G G S PMEN0998S BVDSS 100V RDSON 6 ID 0.2A Features
* 100V,0.2A, RDS(ON).

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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