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Potens semiconductor

PMEN0998S Datasheet Preview

PMEN0998S Datasheet

N-Channel MOSFETs

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100V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration
D
D
S
G
G
S
PMEN0998S
BVDSS
100V
RDSON
6
ID
0.2A
Features
100V,0.2A, RDS(ON) =6Ω@VGS=10V
Improved dv/dt capability
Fast switching
Green Device Available
G-S ESD Protection Diode Embedded
Applications
Motor Drive
Power Tools
LED Lighting
Absolute Maximum Ratings Tc=25unless otherwise noted
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (TC=25)
Drain Current – Continuous (TC=100)
Drain Current – Pulsed1
Power Dissipation (TC=25)
Power Dissipation – Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance Junction to ambient
Rating
100
±20
0.2
0.13
0.8
0.31
0.0025
-50 to 150
-50 to 150
Units
V
V
A
A
A
W
W/
Typ.
---
Max.
400
Unit
/W
Potens semiconductor corp.
1
Ver.1.00




Potens semiconductor

PMEN0998S Datasheet Preview

PMEN0998S Datasheet

N-Channel MOSFETs

No Preview Available !

100V N-Channel MOSFETs
PMEN0998S
Electrical Characteristics (TJ=25 , unless otherwise noted)
Off Characteristics
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Conditions
VGS=0V , ID=250uA
VDS=80V , VGS=0V , TJ=25
VDS=80V , VGS=0V , TJ=125
VGS=±20V , VDS=0V
Min.
100
---
---
---
Typ.
---
---
---
---
Max.
---
1
100
±10
Unit
V
uA
uA
uA
On Characteristics
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
VGS=10V , ID=0.2A
VGS=4.5V , ID=0.1A
VGS=VDS , ID =250uA
VDS=10V , ID=0.2A
--- 3
6
--- 4
8
1 1.7 2.5
--- 0.29 ---
V
S
Dynamic and switching Characteristics
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Total Gate Charge2 , 3
Gate-Source Charge2 , 3
Gate-Drain Charge2 , 3
Turn-On Delay Time2 , 3
Rise Time2 , 3
Turn-Off Delay Time2 , 3
Fall Time2 , 3
VDS=30V , VGS=10V , ID=0.2A
VDD=30V , VGS=10V , RG=6
ID=0.2A
Ciss Input Capacitance
Coss Output Capacitance
VDS=10V , VGS=0V , F=1MHz
Crss Reverse Transfer Capacitance
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width 300us , duty cycle 2%.
3. Essentially independent of operating temperature.
--- 1
2
--- 0.26 0.5
--- 0.2 0.5
--- 4
8
--- 5 10
--- 14 28
--- 10 20
--- 37.5 45
--- 5.4 10
--- 4
8
nC
ns
pF
Min.
---
---
---
Typ.
---
---
---
Max.
0.2
0.4
1
Unit
A
A
V
Potens semiconductor corp.
2
Ver.1.00


Part Number PMEN0998S
Description N-Channel MOSFETs
Maker Potens semiconductor
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PMEN0998S Datasheet PDF






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