PMD04N65M datasheet, mosfets equivalent, Potens semiconductor

Features and benefits

* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available ID 4A TO252 Pin Configuration D S G Applications
* High.

Application

BVDSS 650V RDSON 2.6 Features
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* .

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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