* 40V,200A, RDS(ON) =1.4mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available Applications
* PowerTools
* Load Switc.

PPAK5X6 Pin Configuration DDDD S SSG G D S BVDSS 40V RDSON 1.4m ID 200A Features
* 40V,200A, RDS(ON) =1.4m.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

PMC4998X

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