Datasheet Details
| Part number | PJX30N65T |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 803.60 KB |
| Description | N-Channel MOSFETS |
| Datasheet |
 PJX30N65T Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are using Super Junction technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 30A,650V, RDS(ON) =0.14Ω@VGS = 10V.
- Improved dv/dt capability.
- Fast switching.
- 100% EAS Guaranteed.
- Green Device Available App.
- licHaigthioenffiscient switched mode power supplies.
- LED Lighting.
- Adapter/charger G DS G S Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
- Continuous (TC=25℃) Drain Current.
- Continuous (TC=1.