PJF17N80T datasheet, mosfets equivalent, Potens semiconductor

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Features and benefits

* 800V,17A, RDS(ON) =0.35Ω@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Hi.

Application

TO220F Pin Configuration D S D G G S BVDSS 800V RDSON 0.35 ID 17A Features
* 800V,17A, RDS(ON) =0.35Ω@VGS.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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