* 30V,2.1A , RDS(ON)=40mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* Green Device Available SOT363 Pin Configuration D DS G DD G D S App.

BVDSS 30V RDSON 40m ID 2.1A Features
* 30V,2.1A , RDS(ON)=40mΩ@VGS=10V
* Improved dv/dt capability
* F.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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