PDS8966A datasheet, mosfet equivalent, Potens semiconductor

Features and benefits

* 80V,19A, RDS(ON) =13mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Netw.

Application

SOP8 Pin Configuration DD D D SSSG G D S BVDSS 80V RDSON 13m ID 19A Features
* 80V,19A, RDS(ON) =13mΩ@VGS.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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