PDS4910 datasheet, mosfets equivalent, Potens semiconductor

Features and benefits

* 40V, 6.7A, RDS(ON)=19mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available Applications
* Notebook
* Load Switch

Application

SOP8 Pin Configuration D DD D G S SS G D S BVDSS 40V RDSON 19m ID 6.7A Features
* 40V, 6.7A, RDS(ON)=19mΩ.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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