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Potens semiconductor

PDS4910 Datasheet Preview

PDS4910 Datasheet

N-Channel MOSFETs

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40V N-Channel MOSFETs
PDS4910
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
SOP8 Pin Configuration
D DD
D
G
S
SS
G
D
S
BVDSS
40V
RDSON
19m
ID
6.7A
Features
40V, 6.7A, RDS(ON)=19mΩ@VGS = 10V
Improved dv/dt capability
Fast switching
Green Device Available
Applications
Notebook
Load Switch
LED applications
Hand-Held Device
Absolute Maximum Ratings Tc=25unless otherwise noted
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Continuous (TA=25)
Drain Current Continuous (TA=70)
Drain Current Pulsed1
Power Dissipation (TA=25)
Power Dissipation Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
±20
6.7
5.4
26.8
1.47
0.12
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance Junction to ambient
Typ.
---
Max.
85
Unit
/W
Potens semiconductor corp.
1
Ver.1.00




Potens semiconductor

PDS4910 Datasheet Preview

PDS4910 Datasheet

N-Channel MOSFETs

No Preview Available !

40V N-Channel MOSFETs
PDS4910
Electrical Characteristics (TJ=25 , unless otherwise noted)
Off Characteristics
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VDS=40V , VGS=0V , TJ=25
VDS=32V , VGS=0V , TJ=85
VGS=±20V , VDS=0V
Min.
40
---
---
---
---
Typ.
---
0.034
---
---
---
Max.
---
---
1
10
±100
Unit
V
V/
uA
uA
nA
On Characteristics
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
VGS(th)
gfs
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Forward Transconductance
VGS=10V , ID=6A
VGS=4.5V , ID=4A
VGS=VDS , ID =250uA
VDS=10V , ID=3A
--- 16 19 m
--- 20 25 m
1.2 1.5 2.5
V
--- -4.3 --- mV/
--- 6 --- S
Dynamic and switching Characteristics
Qg Total Gate Charge2 , 3
Qgs Gate-Source Charge2 , 3
VDS=32V , VGS=10V , ID=6A
Qgd Gate-Drain Charge2 , 3
Td(on)
Tr
Turn-On Delay Time2 , 3
Rise Time2 , 3
VDD=20V, VGS=10V , RG=3.3
Td(off)
Turn-Off Delay Time2 , 3
ID=1A
Tf Fall Time2 , 3
Ciss Input Capacitance
Coss Output Capacitance
VDS=20V , VGS=0V , F=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, F=1MHz
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width 300us , duty cycle 2%.
3. Essentially independent of operating temperature.
--- 11.8 23
--- 1.7 3.4 nC
--- 4
8
--- 5 10
--- 8 16
ns
--- 17 34
--- 5 10
--- 722 1440
--- 83 166 pF
--- 61 122
--- 2.1 ---
Min.
---
---
---
Typ.
---
---
---
Max.
6.7
13.4
1
Unit
A
A
V
Potens semiconductor corp.
2
Ver.1.00


Part Number PDS4910
Description N-Channel MOSFETs
Maker Potens semiconductor
Total Page 5 Pages
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