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PDS4806 Datasheet, Potens semiconductor

PDS4806 mosfets equivalent, dual n-channel mosfets.

PDS4806 Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 431.99KB)

PDS4806 Datasheet
PDS4806
Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 431.99KB)

PDS4806 Datasheet

Features and benefits


* 40V,12A,RDS(ON) =13mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Motor.

Application

SOP8 Dual Pin Configuration D2 D1 D2 D1 D1 G1 S1G1S2 G2 S1 G2 D2 S2 BVDSS 40V RDSON 13m ID 12A Features

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

Image gallery

PDS4806 Page 1 PDS4806 Page 2 PDS4806 Page 3

TAGS

PDS4806
Dual
N-Channel
MOSFETs
Potens semiconductor

Manufacturer


Potens semiconductor

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