PDS3912 mosfets equivalent, n-channel mosfets.
* 30V,9A, RDS(ON) =18mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* MB /.
SOP8 Pin Configuration
D DD D G
SS S
G
D S
BVDSS 30V
RDSON 18mΩ
ID 9A
Features
* 30V,9A, RDS(ON) =18mΩ @VGS.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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