* -20V,-11A, RDS(ON) =16mΩ@VGS = -4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for -1.8V Gate Drive Applications .

SOP8 Pin Configuration DDD D G SSS G D S BVDSS -20V RDSON 16mΩ ID -11A Features
* -20V,-11A, RDS(ON) =16mΩ@V.

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

PDS210W

PDS212W

PDS215W

PDS220W

PDS22W

PDS24W

PDS2603

PDS26W

PDS28W

PDS-721

PDS04N15

PDS0744

PDS0960

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