PDS0976 mosfet equivalent, n-channel mosfet.
* 100V,12A, RDS(ON) =9.2mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* Ne.
SOP8 Pin Configuration
DD D D
G SSSG
D S
BVDSS 100V
RDSON 9.2m
ID 12A
Features
* 100V,12A, RDS(ON) =9.2mΩ@.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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