PDP8974 datasheet, mosfet equivalent, Potens semiconductor

Features and benefits

* 80V,120A, RDS(ON) =3.9mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Ne.

Application

TO220 Pin Configuration D GDS G S BVDSS 80V RDSON 3.9m ID 120A Features
* 80V,120A, RDS(ON) =3.9mΩ@VGS = .

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

Image gallery