PDP6966A - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

60V,70A, RDS(ON) =8.2mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PDP6966A n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDP6966A
Manufacturer	Potens semiconductor
File Size	462.57 KB
Description	N-Channel MOSFETs
Datasheet	PDP6966A Datasheet

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60V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO220 Pin Configuration D GDS G S PDP6966A BVDSS 60V RDSON 8.2m ID 70A Features  60V,70A, RDS(ON) =8.