PDP0980 datasheet, mosfets equivalent, Potens semiconductor

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Features and benefits

* 100V,150A, RDS(ON) =4.2mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* N.

Application

TO220 Pin Configuration D GDS G S BVDSS 100V RDSON 4.2m ID 150A Features
* 100V,150A, RDS(ON) =4.2mΩ@VGS .

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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