PDP03N60 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available ID 3A TO220 Pin Configuration D GDS G S.

Potens semiconductor

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Datasheet Details

Part number	PDP03N60
Manufacturer	Potens semiconductor
File Size	540.97 KB
Description	N-Channel MOSFETs
Datasheet	PDP03N60 Datasheet

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Full PDF Text Transcription

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600V N-Channel MOSFETs PDP03N60 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply BVDSS 650V RDSON 4.

Published: Aug 20, 2018 |