PDN4911S datasheet, mosfets equivalent, Potens semiconductor

Features and benefits

* -40V,-2.9A, RDS(ON) =68mΩ@VGS = -10V
* Fast switching
* Green Device Available
* Suit for -4.5V Gate Drive Applications Applications
* POL Applicati.

Application

SOT23-3S Pin Configuration D D S G G S BVDSS -40V RDSON 68m ID -2.9A Features
* -40V,-2.9A, RDS(ON) =68mΩ.

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

Image gallery