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PDN2309S - P-Channel MOSFET

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -20V,-5.8A, RDS(ON) =33mΩ@VGS = -4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • Suit for -1.8V Gate Drive.

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Datasheet preview – PDN2309S

Datasheet Details

Part number PDN2309S
Manufacturer Potens semiconductor
File Size 435.25 KB
Description P-Channel MOSFET
Datasheet download datasheet PDN2309S Datasheet
Additional preview pages of the PDN2309S datasheet.

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Full PDF Text Transcription

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20V P-Channel MOSFETs PDN2309S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D D S G G S BVDSS -20V RDSON 33m ID -5.8A Features  -20V,-5.8A, RDS(ON) =33mΩ@VGS = -4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for -1.
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