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Potens semiconductor

PDN2309 Datasheet Preview

PDN2309 Datasheet

P-Channel MOSFETs

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20V P-Channel MOSFETs
PDN2309
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
SOT23-3 Pin Configuration
D
D
S
G
G
S
BVDSS
-20V
RDSON
33m
ID
-5.8A
Features
-20V,-5.8A, RDS(ON) =33mΩ@VGS = -4.5V
Improved dv/dt capability
Fast switching
Green Device Available
Suit for -1.8V Gate Drive Applications
Applications
Notebook
Load Switch
Battery Protection
Hand-held Instruments
Absolute Maximum Ratings Tc=25unless otherwise noted
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (TC=25)
Drain Current – Continuous (TC=100)
Drain Current – Pulsed1
Power Dissipation (TC=25)
Power Dissipation – Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
Rating
-20
±10
-5.8
-3.7
-23.2
1.56
0.012
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance Junction to ambient
Typ.
---
Max.
80
Unit
/W
Potens semiconductor corp.
1
Ver.1.00




Potens semiconductor

PDN2309 Datasheet Preview

PDN2309 Datasheet

P-Channel MOSFETs

No Preview Available !

20V P-Channel MOSFETs
PDN2309
Electrical Characteristics (TJ=25 , unless otherwise noted)
Off Characteristics
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Conditions
VGS=0V , ID=-250uA
Reference to 25 , ID=-1mA
VDS=-20V , VGS=0V , TJ=25
VDS=-16V , VGS=0V , TJ=125
VGS=±10V , VDS=0V
Min.
-20
---
---
---
---
Typ.
---
-0.02
---
---
---
Max.
---
---
-1
-10
±100
Unit
V
V/
uA
uA
nA
On Characteristics
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
VGS(th)
gfs
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Forward Transconductance
VGS=-4.5V , ID=-4A
VGS=-2.5V , ID=-3A
VGS=-1.8V , ID=-2A
VGS=VDS , ID =-250uA
VDS=-10V , IS=-3A
--- 28
--- 37
--- 49
-0.3 -0.6
--- 2
--- 8.4
33
45 m
65
-1 V
--- mV/
--- S
Dynamic and switching Characteristics
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Total Gate Charge2 , 3
Gate-Source Charge2 , 3
Gate-Drain Charge2 , 3
Turn-On Delay Time2 , 3
Rise Time2 , 3
Turn-Off Delay Time2 , 3
Fall Time2 , 3
VDS=-10V , VGS=-4.5V , ID=-4A
VDD=-10V , VGS=-4.5V , RG=25
ID=-1A
Ciss Input Capacitance
Coss Output Capacitance
VDS=-15V , VGS=0V , F=1MHz
Crss Reverse Transfer Capacitance
---
---
---
---
---
---
---
---
---
---
16.1
1.8
3.8
8.2
30
71.1
19.8
1440
155
115
25
3
7
16
57
135
38
2100
230
170
nC
nS
pF
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width 300us , duty cycle 2%.
3. Essentially independent of operating temperature.
Min.
---
---
---
Typ.
---
---
---
Max.
-5.8
-23.2
-1
Unit
A
A
V
Potens semiconductor corp.
2
Ver.1.00


Part Number PDN2309
Description P-Channel MOSFETs
Maker Potens semiconductor
Total Page 5 Pages
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