* -20V,-5.8A, RDS(ON) =33mΩ@VGS = -4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for -1.8V Gate Drive Applications.

SOT23-3 Pin Configuration D D S G G S BVDSS -20V RDSON 33m ID -5.8A Features
* -20V,-5.8A, RDS(ON) =33mΩ@V.

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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