* 100V,1.4A , RDS(ON)=350mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* Green Device Available Applications
* Networking
* Load Switch.

SOT23S Pin Configuration D D S G G S BVDSS 100V RDSON 350m ID 1.4A Features
* 100V,1.4A , RDS(ON)=350mΩ@V.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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