PDN02P15S datasheet, mosfets equivalent, Potens semiconductor

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Features and benefits

* -150V,-1A, RDS(ON) =750mΩ@VGS = -10V
* Improved dv/dt capability
* Fast switching
* Green Device Available Applications
* Networking
* Load Swit.

Application

SOT23-3S Pin Configuration D G BVDSS -150V RDSON 750m ID -1A Features
* -150V,-1A, RDS(ON) =750mΩ@VGS = -10.

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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