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PDH6980-5 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 65V,180A, RDS(ON) =2.2mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PDH6980-5
Manufacturer Potens semiconductor
File Size 673.40 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDH6980-5 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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65V N-Channel MOSFETs PDH6980-5 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO263 Pin Configuration D BVDSS 65V RDSON 2.2m ID 180A Features  65V,180A, RDS(ON) =2.
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