* -40V, -32.5A, RDS(ON) =17mΩ@VGS = -10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
.

TO220F Pin Configuration D G BVDSS -40V RDSON 17m ID -32.5A Features
* -40V, -32.5A, RDS(ON) =17mΩ@VGS = -1.

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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