PDF0956 datasheet, mosfets equivalent, Potens semiconductor

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 464.67KB)

Features and benefits

* 100V,10A , RDS(ON)=115mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Netw.

Application

TO220F Pin Configuration D GDS G S PDF0956 BVDSS 100V RDSON 115m ID 10A Features
* 100V,10A , RDS(ON)=11.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

Image gallery