PDF07N65 - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using advanced super junction technology.

Key Features

Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PDF07N65 n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDF07N65
Manufacturer	Potens semiconductor
File Size	551.50 KB
Description	N-Channel MOSFETs
Datasheet	PDF07N65 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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650V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply TO220F Pin Configuration S D G PDF07N65 BVDSS 650V RDSON 1.