PDEU69A8Z mosfets equivalent, n-channel mosfets.
* 60V,300mA, RDS(ON) =3Ω@VGS = 10V
* Improved dv/dt capability
* Fast switching
* ESD protected up to 2KV
* Green Device Available
D
S G
G
S
Appli.
SOT323 Pin Configuration
D
BVDSS 60V
RDSON 3
ID 300mA
Features
* 60V,300mA, RDS(ON) =3Ω@VGS = 10V
* Impr.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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