PDEU69A8Z
Overview
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- 60V,300mA, RDS(ON) =3Ω@VGS = 10V
- Improved dv/dt capability
- Fast switching
- ESD protected up to 2KV
- Green Device Available
- S G G S
