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PDEU69A8Z - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 60V,300mA, RDS(ON) =3Ω@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • ESD protected up to 2KV.
  • Green Device Available D S G G S.

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Datasheet Details

Part number PDEU69A8Z
Manufacturer Potens semiconductor
File Size 622.66 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDEU69A8Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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60V N-Channel MOSFETs PDEU69A8Z General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
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