PDD8966A datasheet, mosfets equivalent, Potens semiconductor

Features and benefits

* 80V,60A, RDS(ON) =12mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Netw.

Application

TO252 Pin Configuration D SG G D S PDD8966A BVDSS 80V RDSON 12m ID 60A Features
* 80V,60A, RDS(ON) =12mΩ@VG.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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