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PDD6960 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 60V,75A, RDS(ON) =6mΩ @VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available App.
  • licMaottioor nDsrive.
  • Power Tools.
  • LED Lighting.
  • Quick Charger Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous (TC=25℃) Drain Current.
  • Continuous (TC=100℃) Drain Current.

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Datasheet Details

Part number PDD6960
Manufacturer Potens semiconductor
File Size 837.89 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDD6960 Datasheet
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Preliminary datasheet 60V N-Channel MOSFETs PDD6960 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
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