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Potens semiconductor

PDD6960 Datasheet Preview

PDD6960 Datasheet

N-Channel MOSFETs

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60V N-Channel MOSFETs
PDD6960
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
TO252 Pin Configuration
D
D
S
G
G
S
BVDSS
60V
RDSON
6m
ID
75A
Features
60V,75A, RDS(ON) =6mΩ @VGS = 10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
ApplicMaottioor nDsrive
Power Tools
LED Lighting
Quick Charger
Absolute Maximum Ratings Tc=25unless otherwise noted
Symbol
VDS
VGS
ID
IDM
EAS
IAS
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Continuous (TC=25)
Drain Current Continuous (TC=100)
Drain Current Pulsed1
Single Pulse Avalanche Energy2
Single Pulse Avalanched Current2
Power Dissipation (TC=25)
Power Dissipation Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
Rating
60
±20
75
47
300
181
60.1
101
0.81
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
W/
Thermal Characteristics
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
Typ.
---
---
Max.
62
1.23
Unit
/W
/W
Potens semiconductor corp.
1
Ver.1.00




Potens semiconductor

PDD6960 Datasheet Preview

PDD6960 Datasheet

N-Channel MOSFETs

No Preview Available !

60V N-Channel MOSFETs
PDD6960
Electrical Characteristics (TJ=25 , unless otherwise noted)
Off Characteristics
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VDS=60V , VGS=0V , TJ=25
VDS=48V , VGS=0V , TJ=125
VGS=±20V , VDS=0V
Min.
60
---
---
---
---
Typ.
---
0.036
---
---
---
Max.
---
---
1
10
±100
Unit
V
V/
uA
uA
nA
On Characteristics
RDS(ON) Static Drain-Source On-Resistance3
VGS(th)
VGS(th)
gfs
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Forward Transconductance
VGS=10V , ID=30A
VGS=4.5V , ID=20A
VGS=VDS , ID =250uA
VDS=10V , ID=3A
--- 5.1 6 m
--- 5.9 7.5 m
1.2 1.6 2.5
V
--- -5.08 --- mV/
--- 15 ---
S
Dynamic and switching Characteristics
Qg Total Gate Charge3 , 4
Qgs Gate-Source Charge3 , 4
VDS=30V , VGS=4.5V , ID=10A
Qgd Gate-Drain Charge3 , 4
Td(on)
Tr
Turn-On Delay Time3 , 4
Rise Time3 , 4
VDD=15V , VGS=10V , RG=3.3
Td(off)
Turn-Off Delay Time3 , 4
ID=1A
Tf Fall Time3 , 4
Ciss Input Capacitance
Coss Output Capacitance
VDS=25V , VGS=0V , F=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, F=1MHz
--- 32.8 65
--- 10.8 20
nC
--- 11.6 22
--- 20 40
--- 14.2 28
--- 61.2 122
ns
--- 16.8 34
--- 4740 7110
--- 325 488 pF
--- 161 332
--- 1.6 ---
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
Pulsed Source Current3
Diode Forward Voltage3
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=25V,VGS=10V,L=0.1mH,IAS=60.1A.,RG=25,Starting TJ=25.
3. The data tested by pulsed , pulse width 300us , duty cycle 2%.
4. Essentially independent of operating temperature.
Min.
---
---
---
Typ.
---
---
---
Max.
75
150
1
Unit
A
A
V
Potens semiconductor corp.
2
Ver.1.00


Part Number PDD6960
Description N-Channel MOSFETs
Maker Potens semiconductor
Total Page 5 Pages
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