PDD6960 - N-Channel MOSFETs

Potens semiconductor

Datasheet Details

Part number	PDD6960
Manufacturer	Potens semiconductor
File Size	837.89 KB
Description	N-Channel MOSFETs
Datasheet	PDD6960-Potenssemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

60V,75A, RDS(ON) =6mΩ @VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available App.
licMaottioor nDsrive.
Power Tools.
LED Lighting.
Quick Charger Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous (TC=25℃) Drain Current.
Continuous (TC=100℃) Drain Current.

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Published: Aug 22, 2018 |