* 65V,35A, RDS(ON) =16mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Mot.

PPAK3X3 Pin Configuration DDDD SSSG G D S BVDSS 65V RDSON 16m ID 35A Features
* 65V,35A, RDS(ON) =16mΩ @VG.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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