* 60V,55A, RDS(ON) =8.2mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available Applications
* Networking
* Load Switc.

PPAK5X6 Pin Configuration DDDD S SSG G D S BVDSS 60V RDSON 8.2m ID 55A Features
* 60V,55A, RDS(ON) =8.2mΩ@.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

PDC6960X

PDC6964X

PDC6964Z

PDC6964Z-5

PDC6901X

PDC6902X

PDC6904X

PDC6904X-5

PDC6904Z

PDC6904Z-5

PDC6906X

PDC6906Z

PDC6907Z

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