PDC4756T - N+P Dual Channel MOSFETs

Potens semiconductor

General Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

Key Features

Fast switching.
Green Device Available.
Suit for 4.5V Gate Drive.

📥 Download Datasheet

PDC4756T n+p dual channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDC4756T
Manufacturer	Potens semiconductor
File Size	906.81 KB
Description	N+P Dual Channel MOSFETs
Datasheet	PDC4756T Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
PDC-10-1+	Directional Coupler	Mini-Circuits
PDC0302	SMD POWER INDUCTORS	Superworld Electronics
PDC0403	SMD POWER INDUCTORS	Superworld Electronics
PDC0502	SMD POWER INDUCTORS	Superworld Electronics
PDC0504	SMD POWER INDUCTORS	Superworld Electronics

Other Datasheets by Potens semiconductor

Part Number	Description
PDC4801R	N-Channel MOSFETs
PDC4806T	Dual N-Channel MOSFETs
PDC4902X	N-Channel MOSFET
PDC4903Z	P-Channel MOSFET
PDC4904X	N-Channel MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

40V N+P Dual Channel MOSFETs PDC4756T General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5x6 Dual Pin Configuration D2 D2 D1D1 D1 D2 2 G2 S2 G1 S1 G1 G2 S1 S2 BVDSS 40V -40V RDSON 11.5m 30m ID 42A -27A Features  Fast switching  Green Device Available  Suit for 4.