PDC39F2BX mosfet equivalent, 30v n-channel mosfet.
* 30V,120A, RDS(ON) =2.95mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* N.
ee PPAK5X6 Pin Configuration
h D
s D D D D
D D DD
ata S S S G
G GS S S
S
Features
* 30V,120A, RDS(ON) =2.95m.
These N-Channel enhancement mode power field effect
BVDSS RDSON
ID
transistors are using trench DMOS technology. This
30V
2.95m 120A
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching .
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