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PDC39F2BX Datasheet, Potens semiconductor

PDC39F2BX mosfet equivalent, 30v n-channel mosfet.

PDC39F2BX Avg. rating / M : 1.0 rating-12

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PDC39F2BX Datasheet

Features and benefits


* 30V,120A, RDS(ON) =2.95mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* N.

Application

ee PPAK5X6 Pin Configuration h D s D D D D D D DD ata S S S G G GS S S S Features
* 30V,120A, RDS(ON) =2.95m.

Description

These N-Channel enhancement mode power field effect BVDSS RDSON ID transistors are using trench DMOS technology. This 30V 2.95m 120A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching .

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TAGS

PDC39F2BX
30V
N-Channel
MOSFET
Potens semiconductor

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