PDC2209V datasheet, mosfet equivalent, Potens semiconductor

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Features and benefits

* -20V,-7.5A, RDS(ON) =33mΩ @VGS = -4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available PPAK3x3 Dual Pin Configuration D1 D1D1D2D2.

Application

BVDSS -20V RDSON 33m ID -7.5A Features
* -20V,-7.5A, RDS(ON) =33mΩ @VGS = -4.5V
* Improved dv/dt capabilit.

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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