PDC0854T - Dual N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

100V,6.6A, RDS(ON) =330mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PDC0854T dual n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDC0854T
Manufacturer	Potens semiconductor
File Size	922.15 KB
Description	Dual N-Channel MOSFETs
Datasheet	PDC0854T Datasheet

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100V Dual N-Channel MOSFETs PDC0854T General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5x6 Dual Pin Configuration D2 D2 D1 D1 D1 G2 S2 G1 S1 G1 G2 S1 D2 S2 BVDSS 100V RDSON 330m ID 6.6A Features  100V,6.