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Potens semiconductor

PDC0810V Datasheet Preview

PDC0810V Datasheet

Dual N-Channel MOSFETs

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100V Dual N-Channel MOSFETs
PDC0810V
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
PPAK3X3 Dual Pin Configuration
D1D1D2D2
D1
G1 G2
D2
BVDSS
100V
RDSON
200m
ID
7.8A
Features
100V,7.8A, RDS(ON) =200mΩ @VGS = 10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
Applications
Networking
Load switch
LED applications
S1G1S2G2
S1 S2
Absolute Maximum Ratings Tc=25unless otherwise noted
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Continuous (TC=25)
Drain Current Continuous (TC=100)
Drain Current Pulsed1
Power Dissipation (TC=25)
Power Dissipation Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
Rating
100
±20
7.8
4.9
31.2
27.1
0.21
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Characteristics
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
Typ.
---
---
Max.
62
4.6
Unit
/W
/W
Potens semiconductor corp.
1
Ver.1.00




Potens semiconductor

PDC0810V Datasheet Preview

PDC0810V Datasheet

Dual N-Channel MOSFETs

No Preview Available !

100V Dual N-Channel MOSFETs
PDC0810V
Electrical Characteristics (TJ=25 , unless otherwise noted)
Off Characteristics
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VDS=100V , VGS=0V , TJ=25
VDS=80V , VGS=0V , TJ=125
VGS=±20V , VDS=0V
Min.
100
---
---
---
---
Typ.
---
0.10
---
---
---
Max.
---
---
1
10
±100
Unit
V
V/
uA
uA
nA
On Characteristics
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
gfs
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Forward Transconductance
VGS=10V , ID=4A
VGS=4.5V , ID=2A
VGS=VDS , ID =250uA
VDS=10V , ID=1A
--- 160 200 m
--- 170 210 m
1.2 1.8 2.5
V
--- -4 --- mV/
--- 5 --- S
Dynamic and switching Characteristics
Qg Total Gate Charge2 , 3
Qgs Gate-Source Charge2 , 3
VDS=50V , VGS=10V , ID=2A
Qgd Gate-Drain Charge2 , 3
Td(on)
Tr
Turn-On Delay Time2 , 3
Rise Time2 , 3
VDD=30V , VGS=10V , RG=3.3
Td(off)
Turn-Off Delay Time2 , 3
ID=1A
Tf Fall Time2 , 3
Ciss Input Capacitance
Coss Output Capacitance
VDS=50V , VGS=0V , F=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
--- 13.4 21
--- 2.9
6
nC
--- 1.7
4
--- 1.6
3
--- 6.6 13
--- 11.5 22
ns
--- 3.6
7
--- 820 1190
--- 35 55 pF
--- 20 30
--- 1.3 2.6
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
Pulsed Source Current2
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
Min.
---
---
---
Typ.
---
---
---
Max.
7.8
15.6
1
Unit
A
A
V
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width 300us , duty cycle 2%.
3. Essentially independent of operating temperature.
Potens semiconductor corp.
2
Ver.1.00


Part Number PDC0810V
Description Dual N-Channel MOSFETs
Maker Potens semiconductor
Total Page 5 Pages
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