PDC0810V - Dual N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

100V,7.8A, RDS(ON) =200mΩ @VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

Potens semiconductor

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Datasheet Details

Part number	PDC0810V
Manufacturer	Potens semiconductor
File Size	638.13 KB
Description	Dual N-Channel MOSFETs
Datasheet	PDC0810V Datasheet
Additional preview pages of the PDC0810V datasheet.

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Full PDF Text Transcription

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100V Dual N-Channel MOSFETs PDC0810V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3X3 Dual Pin Configuration D1D1D2D2 D1 G1 G2 D2 BVDSS 100V RDSON 200m ID 7.8A Features  100V,7.

Published: Aug 8, 2018 |