PDC0810V mosfets equivalent, dual n-channel mosfets.
* 100V,7.8A, RDS(ON) =200mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* .
PPAK3X3 Dual Pin Configuration
D1D1D2D2
D1 G1 G2
D2
BVDSS 100V
RDSON 200m
ID 7.8A
Features
* 100V,7.8A, RD.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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