PDC0810T mosfets equivalent, dual n-channel mosfets.
* 100V,10A, RDS(ON) =185mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* Ne.
PPAK5x6 Dual Pin Configuration
D2 D2 D1 D1
D1
G2 S2 G1 S1
G1
G2 S1
D2 S2
BVDSS 100V
RDSON 185m
ID 10A
Featu.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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