* 40V,4.3A, RDS(ON) =39mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available DFN2X2 Dual 2EP Pin Configuration D1 G2 ˙ S2 .

BVDSS 40V RDSON 39m ID 4.3A Features
* 40V,4.3A, RDS(ON) =39mΩ @VGS = 10V
* Improved dv/dt capability
.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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