* Fast switching
* Green Device Available
* Suit for 1.8V Gate Drive Applications ˙ S1 G1 D2 D1 G2 S2 D1 G G1 G2 D2 App
*licNaotteiobonosk
* Load.

DFN2X2 Dual 2EP Pin Configuration BVDSS 20V -20V RDSON 40m 100m ID 3.8A -2.5A Features
* Fast switching
*.

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high.

+P

PDB2116M

PDB2216S

PDB2309L

PDB24

PDB241-GTR

PDB-C107

PDB-C109

PDB-C110

PDB-C113

PDB-C120

PDB-C122

PDB-C134

PDB-C134F

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