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PDB2116S - N+P Dual Channel MOSFET

PDB2116S Description

20V N+P Dual Channel MOSFETs PDB2116S General .
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDB2116S Features

* Fast switching
* Green Device Available

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Datasheet Details

Part number
PDB2116S
Manufacturer
Potens semiconductor
File Size
435.94 KB
Datasheet
PDB2116S-Potenssemiconductor.pdf
Description
N+P Dual Channel MOSFET

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N +P Dual Channel MOSFET Potens semiconductor
Potens semiconductor PDB2116S-like datasheet