* Fast switching
* Green Device Available
* Suit for 1.8V Gate Drive Applications Applications
* Notebook
* Load Switch
* Networking
* Hand-he.

DFN2X3 Dual Pin Configuration D1 D1 D2 D2 D1 G1 G S1 G1 S2 G2 S1 G2 D2 S2 Features
* Fast switching
* .

These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, 20V -20V 40m 90m 3.8A -2.5A provid.

+P

PDB2116S

PDB2216S

PDB2309L

PDB24

PDB241-GTR

PDB-C107

PDB-C109

PDB-C110

PDB-C113

PDB-C120

PDB-C122

PDB-C134

PDB-C134F

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