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Potens semiconductor

PDB2116M Datasheet Preview

PDB2116M Datasheet

N+P Dual Channel MOSFETs

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20V N+P Dual Channel MOSFETs
PDB2116M
General Description
These N+P dual Channel enhancement mode power
BVDSS RDSON
ID
field effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
20V
-20V
40m
90m
3.8A
-2.5A
provide superior switching performance, and withstand
high energy pulse in the avalanche and commutation
mode. These devices are well suited for high efficiency
fast switching applications.
DFN2X3 Dual Pin Configuration
D1 D1 D2 D2
D1
G1 G
S1 G1 S2 G2
S1
G2
D2
S2
Features
Fast switching
Green Device Available
Suit for 1.8V Gate Drive Applications
Applications
Notebook
Load Switch
Networking
Hand-held Instruments
Absolute Maximum Ratings Tc=25unless otherwise noted
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Continuous (TC=25)
Drain Current Continuous (TC=100)
Drain Current Pulsed1
Power Dissipation (TC=25)
Power Dissipation Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
Rating
20 -20
±10
±10
3.8 -2.5
2.3 -1.5
15.2
-10
1.25 1.25
0.01 0.01
-55 to 150 -55 to 150
-55 to 150 -55 to 150
Units
V
V
A
A
A
W
W/
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance Junction to ambient
Typ.
---
Max.
100
Unit
/W
Potens semiconductor corp.
1
Ver.1.00




Potens semiconductor

PDB2116M Datasheet Preview

PDB2116M Datasheet

N+P Dual Channel MOSFETs

No Preview Available !

20V N+P Dual Channel MOSFETs
PDB2116M
N-CH Electrical Characteristics (TJ=25 , unless otherwise)
noted)
Off Characteristics
Symbol
Parameter
Conditions
Min.
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
IDSS Drain-Source Leakage Current
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VDS=16V , VGS=0V , TJ=25
VDS=16V , VGS=0V , TJ=125
20
---
---
---
IGSS Gate-Source Leakage Current
VGS=±10V , VDS=0V
---
Typ.
---
0.02
---
---
---
Max.
---
---
1
10
±100
Unit
V
V/
uA
uA
nA
On Characteristics
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
VGS(th)
gfs
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Forward Transconductance
VGS=4.5V , ID=3A
VGS=2.5V , ID=2A
VGS=1.8V , ID=1.5A
VGS=VDS , ID =250uA
VDS=10V , ID=2A
--- 30
--- 42
55
0.3 0.6
--- -2
--- 4.4
40 m
55 m
70 m
1V
--- mV/
--- S
Dynamic and switching Characteristics
Qg Total Gate Charge2 , 3
Qgs Gate-Source Charge2 , 3
VDS=10V , VGS=4.5V , ID=3A
Qgd Gate-Drain Charge2 , 3
Td(on)
Tr
Turn-On Delay Time2 , 3
Rise Time2 , 3
VDD=10V , VGS=4.5V , RG=25
Td(off)
Turn-Off Delay Time2 , 3
ID=1A
Tf Fall Time2 , 3
Ciss Input Capacitance
Coss Output Capacitance
VDS=15V , VGS=0V , F=1MHz
Crss Reverse Transfer Capacitance
--- 5.8 10
--- 0.6 1.5
--- 1.5
3
--- 2.9
6
--- 8.4 16
--- 19.2 38
--- 5.6 12
--- 315 600
--- 50 80
--- 40 60
nC
ns
pF
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Conditions
IS Continuous Source Current
ISM Pulsed Source Current
VSD Diode Forward Voltage
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width 300us , duty cycle 2%.
3. Essentially independent of operating temperature.
Min. Typ. Max. Unit
--- --- 3.8 A
--- --- 7.6 A
--- ---
1
V
Potens semiconductor corp.
2
Ver.1.00


Part Number PDB2116M
Description N+P Dual Channel MOSFETs
Maker Potens semiconductor
Total Page 6 Pages
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