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PDB2116M - N+P Dual Channel MOSFETs

Description

field effect transistors are using trench DMOS technology.

Features

  • Fast switching.
  • Green Device Available.
  • Suit for 1.8V Gate Drive.

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Datasheet Details

Part number PDB2116M
Manufacturer Potens semiconductor
File Size 560.34 KB
Description N+P Dual Channel MOSFETs
Datasheet download datasheet PDB2116M Datasheet
Additional preview pages of the PDB2116M datasheet.

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Full PDF Text Transcription

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20V N+P Dual Channel MOSFETs PDB2116M General Description These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, 20V -20V 40m 90m 3.8A -2.5A provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. DFN2X3 Dual Pin Configuration D1 D1 D2 D2 D1 G1 G S1 G1 S2 G2 S1 G2 D2 S2 Features  Fast switching  Green Device Available  Suit for 1.
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