Datasheet Details
| Part number | PDB2116M |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 560.34 KB |
| Description | N+P Dual Channel MOSFETs |
| Datasheet | PDB2116M-Potenssemiconductor.pdf |
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Overview: 20V N+P Dual Channel MOSFETs PDB2116M General.
| Part number | PDB2116M |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 560.34 KB |
| Description | N+P Dual Channel MOSFETs |
| Datasheet | PDB2116M-Potenssemiconductor.pdf |
|
|
|
These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, 20V -20V 40mī 90mī 3.8A -2.5A provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Compare PDB2116M distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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