LP802 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Polyfet RF Devices

General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Key Features

low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM.

📥 Download Datasheet

LP802 silicon gate enhancement mode rf power ldmos transistor by Polyfet RF Devices - Datasheet Preview

Datasheet Details

Part number	LP802
Manufacturer	Polyfet RF Devices
File Size	35.75 KB
Description	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Datasheet	LP802 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
LP8029-L4	built-in decoder RF amplification	Silvan Chip
LP8029-M4	built-in decoder RF amplification	Silvan Chip
LP802B	Tri-state decoding controller	LAND-HOP
LP801B	Encoder/Decoder	Shenzhen
LP8031AH	MCS51 8-BIT CONTROL-ORIENTED MICROCONTROLLERS	Intel

Other Datasheets by Polyfet RF Devices

Part Number	Description
LP802	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
LP801	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
LP801	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
LP821	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
LP821	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

polyfet rf devices LP802 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 30.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 80 Watts Junction to Case Thermal Resistance o 1.