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L2801 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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Datasheet Details

Part number L2801
Manufacturer Polyfet RF Devices
File Size 42.16 KB
Description SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Datasheet download datasheet L2801 Datasheet

General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet" process

Overview

polyfet rf devices L2801 General.

Key Features

  • low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM.

More Datasheets from Polyfet RF Devices

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L2821 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR