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L2801 Datasheet

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Polyfet RF Devices · L2801 File Size : 42.16KB · 2 hits

Features and Benefits

low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.0 Watts Single Ended Package Style S02 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 2.

L2801 L2801 L2801
TAGS
SILICON
GATE
ENHANCEMENT
MODE
RF
POWER
LDMOS
TRANSISTOR
L2800
L2801
L2821
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