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BAX12 - Controlled avalanche diode

Description

The BAX12 is a controlled avalanche diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package.

Switching of inductive loads in semi-electronic telephone exchanges.

Features

  • Hermetically sealed leaded glass SOD27 (DO-35) package.
  • Switching speed: max. 50 ns.
  • General.

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Datasheet Details

Part number BAX12
Manufacturer Philipss
File Size 39.41 KB
Description Controlled avalanche diode
Datasheet download datasheet BAX12 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification Controlled avalanche diode FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 90 V • Repetitive peak reverse voltage: max. 90 V • Repetitive peak forward current: max. 800 mA • Repetitive peak reverse current: max. 600 mA • Capable of absorbing transients repetitively. Marking code: BAX12. handbook, halfpage k BAX12 DESCRIPTION The BAX12 is a controlled avalanche diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package.
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